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| Semiconductor IRF234, IRF235, IRF236, IRF237 8.1A and 6.5A, 275V and 250V, 0.45 and 0.68 Ohm, N-Channel Power MOSFETs Description These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for applications such as switching regulators, switching convertors, motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. These types can be operated directly from integrated circuits. Formerly developmental type TA17413. January 1998 Features * 8.1A and 6.5A, 275V and 250V * rDS(ON) = 0.45 and 0.68 * Single Pulse Avalanche Energy Rated * SOA is Power Dissipation Limited * Nanosecond Switching Speeds * Linear Transfer Characteristics * High Input Impedance * 275V, 250V DC Rated - 120V AC Line System Operation * Related Literature - TB334 "Guidelines for Soldering Surface Mount Components to PC Boards" Symbol D Ordering Information PART NUMBER IRF234 IRF235 IRF236 IRF237 PACKAGE TO-204AA TO-204AA TO-204AA TO-204AA BRAND IRF234 IRF235 IRF236 IRF237 G S NOTE: When ordering, include the entire part number. Packaging JEDEC TO-204AA DRAIN (FLANGE) SOURCE (PIN 2) GATE (PIN 1) CAUTION: These devices are sensitive to electrostatic discharge. Users should follow proper ESD Handling Procedures. Copyright (c) Harris Corporation 1997 File Number 2208.3 5-1 IRF234, IRF235, IRF236, IRF237 Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified IRF234 Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . VDS Drain to Gate Voltage (RGS = 20k) (Note 1) . . . . . . . . . VDGR Continuous Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . .ID TC = 100oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .ID Pulsed Drain Current (Note 3) . . . . . . . . . . . . . . . . . . . . . . . IDM Gate to Source Voltage. . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGS Maximum Power Dissipation. . . . . . . . . . . . . . . . . . . . . . . . . . PD Linear Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Single Pulse Avalanche Energy Rating (Note 4) . . . . . . . . . EAS Operating and Storage Temperature . . . . . . . . . . . . . TJ, TSTG Maximum Temperature for Soldering Leads at 0.063in (1.6mm) from Case for 10s . . . . . . . . . . . TL Package Body for 10s, See Techbrief 334 . . . . . . . . . . . .Tpkg 250 250 8.1 5.1 32 20 75 0.6 180 -55 to 150 300 260 IRF235 250 250 6.5 4.1 26 20 75 0.6 180 -55 to 150 300 260 IRF236 275 275 8.1 5.1 32 20 75 0.6 180 -55 to 150 300 260 IRF237 275 275 6.5 4.1 26 20 75 0.6 180 -55 to 150 300 260 UNITS V V A A A V W W/oC mJ oC oC oC CAUTION: Stresses above those listed in "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. NOTE: 1. TJ = 25oC to 125oC. Electrical Specifications PARAMETER TC = 25oC, Unless Otherwise Specified SYMBOL BVDSS TEST CONDITIONS VGS = 0V, ID = 250A, (Figure 10) 250 275 VGS(TH) VGS = VDS, ID = 250A IDSS VDS = Rated BVDSS, VGS = 0V VDS = 0.8 x Rated BVDSS, VGS = 0V TJ =125oC 2.0 4.0 25 250 V V V A A MIN TYP MAX UNITS Drain to Source Breakdown Voltage IRF234, IRF235 IRF236, IRF237 Gate to Threshold Voltage Zero-Gate Voltage Drain Current On-State Drain Current (Note 2) IRF234, IRF236 IRF235, IRF237 Gate to Source Leakage Drain to Source On-State Resistance (Note 2) IRF234, IRF236 IRF235, IRF237 Forward Transconductance (Note 2) Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Gate Charge (Gate to Source + Gate to Drain) Gate to Source Charge Gate to Drain "Miller" Charge ID(ON) VDS > ID(ON) x rDS(ON)MAX, VGS = 10V, (Figure 7) 8.1 6.5 - 100 A A nA IGSS rDS(ON) VGS = 20V VGS = 10V, ID = 4.1A, (Figures 8, 9) - gfs td(ON) tr td(OFF) tf Qg(TOT) VGS = 10V, ID = 8.1A, VDS = 0.8 x Rated BVDSS IG(REF) = 1.5mA, (Figures 14, 19, 20) Gate Charge is Essentially Independent of Qgs Operating Temperature Qgd VDS 50V, ID = 4.1A, (Figure 12) VDD = 125V, ID 8.1A, RG = 12, RL = 1.1 VGS = 10V, (Figures 17, 18) MOSFET Switching Times are Essentially Independent of Operating Temperature 2.9 - 0.32 0.48 4.3 9.1 23 31 19 24 0.45 0.68 14 35 47 29 35 S ns ns ns ns nC - 5.1 12 - nC nC 5-2 IRF234, IRF235, IRF236, IRF237 Electrical Specifications PARAMETER Input Capacitance Output Capacitance Reverse Transfer Capacitance Internal Drain Inductance TC = 25oC, Unless Otherwise Specified (Continued) SYMBOL CISS COSS CRSS LD Measured Between the Contact Screw on the Flange that is Closer to Source and Gate Pins and the Center of Die Measured From The Source Lead, 6mm (0.25in) From the Flange and the Source Bonding Pad Modified MOSFET Symbol Showing the Internal Devices Inductances D LD G LS S TEST CONDITIONS VGS = 0V, VDS = 25V, f = 1.0MHz, (Figure 11) MIN - TYP 600 180 52 5.0 MAX - UNITS pF pF pF nH Internal Source Inductance LS - 12.5 - nH Therma Resistance Junction to Case Therma Resistance Junction to Ambient RJC RJA Free Air Operation - - 1.67 30 oC/W oC/W Source to Drain Diode Specifications PARAMETER Continuous Source to Drain Current Pulse Source to Drain Current (Note 3) SYMBOL IS ISDM TEST CONDITIONS Modified MOSFET Symbol Showing the Integral Reverse P-N Junction Diode G D MIN - TYP - MAX 8.1 32 UNITS A A S Source to Drain Diode Voltage (Note 2) Reverse Recovery Time Reverse Recovered Charge NOTES: VSD trr QRR TJ = 25oC, ISD = 8.1A, VGS = 0V, (Figure 13) TJ = 25oC, ISD = 8.1A, dISD/dt = 100A/s TJ = 25oC, ISD = 8.1A, dISD/dt = 100A/s 92 0.63 180 1.3 2.0 390 2.7 V ns C 2. Pulse test: pulse width 300s, duty cycle 2%. 3. Repetitive rating: pulse width limited by Max junction temperature. See Transient Thermal Impedance curve (Figure 3). 4. VDD = 50V, starting TJ = 25oC, L = 4.5mH, RG = 25, peak IAS = 8.1A. See Figures 15, 16. 5-3 IRF234, IRF235, IRF236, IRF237 Typical Performance Curves 1.2 POWER DISSIPATION MULTIPLIER 1.0 ID, DRAIN CURRENT (A) Unless Otherwise Specified 10 8 IRF234, IRF236 6 IRF235, IRF237 4 0.8 0.6 0.4 0.2 0 2 0 0 50 100 150 TC, CASE TEMPERATURE (oC) 25 50 75 100 125 150 TC, CASE TEMPERATURE (oC) FIGURE 1. NORMALIZED POWER DISSIPATION vs CASE TEMPERATURE FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs CASE TEMPERATURE 10 ZJC, TRANSIENT THERMAL IMPEDANCE (oC/W) 1 0.5 0.2 0.1 0.05 0.02 0.01 SINGLE PULSE PDM 0.1 t1 t2 t2 NOTES: DUTY FACTOR: D = t1/t2 PEAK TJ = PDM x ZJC + TC 0.1 10-3 10-2 t1, RECTANGULAR PULSE DURATION (s) 1 10 0.01 10-5 10-4 FIGURE 3. MAXIMUM TRANSIENT THERMAL IMPEDANCE 100 IRF234, 236 ID, DRAIN CURRENT (A) IRF235, 237 10 IRF234, 236 IRF235, 237 1ms 1 OPERATION IN THIS REGION IS LIMITED BY rDS(ON) TC = 25oC TJ = MAX RATED SINGLE PULSE 0.1 1 10ms DC IRF236, IRF237 1000 100s 10s ID, DRAIN CURRENT (A) 15 VGS = 10V VGS = 8V 80s PULSE TEST 12 VGS = 7V 9 6 VGS = 6V 3 VGS = 4V 0 0 25 50 75 100 VDS, DRAIN TO SOURCE VOLTAGE (V) 125 VGS = 5V IRF234, IRF235 100 10 VDS, DRAIN TO SOURCE VOLTAGE (V) FIGURE 4. FORWARD BIAS SAFE OPERATING AREA FIGURE 5. OUTPUT CHARACTERISTICS 5-4 IRF234, IRF235, IRF236, IRF237 Typical Performance Curves 15 80ms PULSE TEST 12 VGS = 10V VGS = 8V Unless Otherwise Specified (Continued) 100 VDS = 2 x VGS 80s PULSE TEST ID, DRAIN CURRENT (A) ID, DRAIN CURRENT (A) 10 9 VGS = 7V 6 VGS = 6V 3 VGS = 4.0V 0 0 2 4 6 8 VDS, DRAIN TO SOURCE VOLTAGE (V) 10 VGS = 5V 1 TJ = 150oC 0.1 0 TJ = 25oC 10 2 4 6 8 VGS, GATE TO SOURCE VOLTAGE (V) FIGURE 6. SATURATION CHARACTERISTICS FIGURE 7. TRANSFER CHARACTERISTICS 4.0 DRAIN TO SOURCE ON RESISTANCE 80s PULSE TEST NORMALIZED DRAIN TO SOURCE ON RESISTANCE VOLTAGE 3.2 3.0 ID = 4.1A VGS = 10V 2.4 2.4 1.8 1.6 VGS = 10V 0.8 VGS = 20V 0 0 8 16 24 ID, DRAIN CURRENT (A) 32 40 1.2 0.6 0 -60 -40 -20 0 20 40 60 80 100 120 140 160 TJ, JUNCTION TEMPERATURE (oC) FIGURE 8. DRAIN TO SOURCE ON RESISTANCE vs GATE VOLTAGE AND DRAIN CURRENT FIGURE 9. NORMALIZED DRAIN TO SOURCE ON RESISTANCE vs JUNCTION TEMPERATURE 1.25 NORMALIZED DRAIN TO SOURCE BREAKDOWN VOLTAGE ID = 250A 1500 VGS = 0V, f = 1MHz CISS = CGS + CGD CRSS = CGD COSS CDS + CGD 1.15 C, CAPACITANCE (pF) 1200 1.05 900 CISS 600 0.95 COSS 0.85 300 CRSS 0.75 -60 -40 -20 0 20 40 60 80 100 120 140 160 0 1 10 VDS, DRAIN TO SOURCE VOLTAGE (V) 100 TJ, JUNCTION TEMPERATURE (oC) FIGURE 10. NORMALIZED DRAIN TO SOURCE BREAKDOWN VOLTAGE vs JUNCTION TEMPERATURE FIGURE 11. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE 5-5 IRF234, IRF235, IRF236, IRF237 Typical Performance Curves 10 gfs, TRANSCONDUCTANCE (S) VDS 50V 80s PULSE TEST Unless Otherwise Specified (Continued) 102 ISD, SOURCE TO DRAIN CURRENT (A) 8 6 TJ = 25oC TJ = 150oC 10 4 TJ = 150oC 1 TJ = 25oC 2 0 0.1 0 3 6 9 ID, DRAIN CURRENT (A) 12 15 0 0.4 0.8 1.2 1.6 VSD, SOURCE TO DRAIN VOLTAGE (V) 2.0 FIGURE 12. TRANSCONDUCTANCE vs DRAIN CURRENT FIGURE 13. SOURCE TO DRAIN DIODE VOLTAGE 20 VGS, GATE TO SOURCE VOLTAGE (V) ID = 8.1A 16 VDS = 50V 12 VDS = 125V VDS = 200V 8 4 0 0 10 20 30 40 50 Qg(TOT), TOTAL GATE CHARGE (nC) FIGURE 14. GATE TO SOURCE VOLTAGE vs GATE CHARGE 5-6 IRF234, IRF235, IRF236, IRF237 Test Circuits and Waveforms VDS BVDSS L VARY tP TO OBTAIN REQUIRED PEAK IAS VGS DUT tP RG IAS VDD tP VDS VDD + 0V IAS 0.01 0 tAV FIGURE 15. UNCLAMPED ENERGY TEST CIRCUIT FIGURE 16. UNCLAMPED ENERGY WAVEFORMS tON td(ON) tr RL VDS + tOFF td(OFF) tf 90% 90% RG DUT - VDD 0 10% 90% 10% VGS VGS 0 10% 50% PULSE WIDTH 50% FIGURE 17. SWITCHING TIME TEST CIRCUIT FIGURE 18. RESISTIVE SWITCHING WAVEFORMS CURRENT REGULATOR VDS (ISOLATED SUPPLY) VDD Qg(TOT) VGS 12V BATTERY 0.2F 50k 0.3F SAME TYPE AS DUT Qgs Qgd D G DUT 0 VDS IG(REF) 0 IG CURRENT SAMPLING RESISTOR S VDS ID CURRENT SAMPLING RESISTOR IG(REF) 0 FIGURE 19. GATE CHARGE TEST CIRCUIT FIGURE 20. GATE CHARGE WAVEFORMS 5-7 |
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